![Figure 1 from A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives | Semantic Scholar Figure 1 from A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/75a5c39a9dcca96f5fde6d7fe99c368615a6c229/2-Figure1-1.png)
Figure 1 from A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives | Semantic Scholar
![Cross sections of the NPN SiGe:C heterojunction bipolar transistors... | Download Scientific Diagram Cross sections of the NPN SiGe:C heterojunction bipolar transistors... | Download Scientific Diagram](https://www.researchgate.net/publication/267195220/figure/fig2/AS:392046448791553@1470482565218/Cross-sections-of-the-NPN-SiGeC-heterojunction-bipolar-transistors-HBT-used-The.png)
Cross sections of the NPN SiGe:C heterojunction bipolar transistors... | Download Scientific Diagram
![Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits - ScienceDirect Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0167931713006874-gr1.jpg)
Three-dimensional InP-DHBT on SiGe-BiCMOS integration by means of Benzocyclobutene based wafer bonding for MM-wave circuits - ScienceDirect
![Figure 2 from Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer | Semantic Scholar Figure 2 from Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/8e715ad9c37ebc03631b56a726a603dc0fbdd58f/2-Figure2-1.png)
Figure 2 from Development of a Through-Silicon Via (TSV) Process Module for Multi-project Wafer SiGe BiCMOS and Silicon Interposer | Semantic Scholar
![Schematic of cross section view of the IBM SiGe HBT in a BiCMOS process... | Download Scientific Diagram Schematic of cross section view of the IBM SiGe HBT in a BiCMOS process... | Download Scientific Diagram](https://www.researchgate.net/publication/280921367/figure/fig4/AS:641701676867585@1530005010353/Schematic-of-cross-section-view-of-the-IBM-SiGe-HBT-in-a-BiCMOS-process-10.png)
Schematic of cross section view of the IBM SiGe HBT in a BiCMOS process... | Download Scientific Diagram
![Figure 3 from A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT | Semantic Scholar Figure 3 from A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/e8c43c133dbfa8f85ac1d13d4ffcea1e0610de32/2-Figure3-1.png)